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PROBLEM TO BE SOLVED : To provide a method for manufacturing a group 13 element nitride crystal inexpensively on an industrial basis which maintains sufficient crystal growth rate stably and continuously.
SOLUTION : In the method for manufacturing a group 13 element nitride crystal, a group 13 element nitride crystal is grown within a liquid phase 9 containing at least an alkali metal element or an alkaline-earth metal element, a group 13 element, and nitrogen element while removing the alkali metal element or the alkaline-earth metal element from the liquid phase. The removing rate of the alkali metal element or the alkaline-earth metal element from the liquid phase is ≥0.0020 mg/h/cm3.
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