A method of manufacturing a semiconductor device

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Electrodes formed in a partial surface area of a semiconductor substrate and distal ends of conductive nanotubes bristled on a surface of a growth substrate, are bombarded with rare gas plasma. The distal ends of the conductive nanotubes bombarded with the rare gas plasma are brought into contact with the electrodes bombarded with the rare gas plasma to fix the conductive nanotubes to the electrodes. The growth substrate is separated from the semiconductor substrate in such a manner that the conductive nanotubes fixed to the electrodes remain on the electrodes formed on the semiconductor substrate.