Quaternary zinc oxide thin film and Method for manufacturing the same and Electronic device comprisi

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PURPOSE : A quaternary zinc oxide thin film, a method for manufacturing the same, and an electronic device comprising the same are provided to obtain a quaternary zinc oxide thin film with bandgap energy of 3.7eV or greater and a low specific resistance of 10^-3Ωcm through co-doping of magnesium and group III elements.CONSTITUTION : A quaternary zinc oxide thin film comprises magnesium and one or more of group III elements consisting of indium, gallium, and aluminum. In order to implement co-doping, the doping concentration of magnesium is fixed while the doping concentration of the group III element is controlled. The resistance value of the group III element ranges from 10×10^-3Ωcm to 7×10^-4Ωcm.[Reference numerals] (AA) Generally used TCO material ·Low specific resistance ·Wide band-gap energy ·In is rare metal and too expensive ·Low chemical thermal stability; (BB) ZnO is an inexpensive material ·ZnO has low specific resistance ·Using ZnO doped with group III element primarily·Expressing superior optical, electric characteristics(3.5-3.6eV, 10^-4Ωcm); (CC) Mg is a generally used band-gap engineering element ·Band-gap energy(3.3eV-5.0eV) of an MZO thin film ·High specific resistance(10^5Ωcm); (DD) Band-gap arrangement problem of a TCO (3.5eV)/ZnS(3.65eV)/CIGS(1.5eV)/Mo structure ·Embodiment of UV-LED(10^-4Ωcm) is necessaryCOPYRIGHT KIPO 2013