CMP slurry composition for selective polishing of silicon nitride

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PURPOSE : A chemical mechanical polishing slurry composition is provided to improve polishing rate of silicon nitride compared with silicon oxide and/or polysilicon, thereby capable of selectively polishing silicon nitride. CONSTITUTION : A chemical mechanical polishing slurry composition has the polishing rate ratio of silicon nitride to silicon oxide is 5 : 1 or more, and the polishing rate ratio of silicon nitride to polysilicon is 5 : 1 or more. The slurry composition comprises ultrapure water, abrasive, iron ion compound, stabilizer, a pyridine based compound, and a (meth)acrylate based copolymer. In the slurry composition, the content ratio of (meth)acrylate based copolymer to the pyridine based compound is 10 : 1 -1 : 10. The abrasive is one or more selected from a group consisting of ceria, silica, alumina, titania, zirconia, ceria-coated or doped silica, and rare earth metal-coated zirconia. COPYRIGHT KIPO 2012