ETCHANT FOR THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY

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The present invention refers to thin film transistor liquid crystal display device constituting a TFT (Thin Film Transistor) of gate (Gate), source (Source) and drain (Drain) electrode copper re metal wiring for multiple of another metal layer (patterning) of slide arm of stepper for patterning film is directed to compositions. The present invention refers to hydrogen peroxide 3-20 weight %, sulfate 0.1-5 weight %, % weight 0.001-2 fluorine compound, chelating number 0.1-5 weight %, inorganic 0.1-5 weight %, boron-based compound 0.01-1 weight %, additive 0.1-5 100 weight % weight % and total weight including water etching so that etching rate is suitable to composition, suitable etch rate of an appropriate taper and inclination angle by using the mask pattern.. In addition existing fruit tree-based etchant problem increasing the, lateral stability increase the capability of the treated quantity is characterized in that the.