METHOD OF PRODUCING HIGHLY PURE ELEMENTARY SILICON

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FIELD : chemistry.SUBSTANCE : invention relates to the technology of producing highly pure elementary silicon through reaction of silicon tetrachloride with a liquid metallic reducing agent using a double-reactor installation. The method involves the following steps : feeding into a first reactor liquid silicon tetrachloride and an alkali or alkali-earth metal reducing agent in liquid form at temperature below the boiling point of said alkali or alkali-earth metal to obtain a mixture of a chloride salt of an alkali or alkali-earth metal and elementary silicon, and separation of the chloride salt of alkali or alkali-earth metal from elementary silicon in a second reactor, wherein the mixture of the chloride salt of alkali or alkali-earth metal and elementary silicon is separated by heating the second reactor to temperature higher than the boiling point of the chloride salt of the alkali or alkali-earth metal, using water to dissolve the chloride salt of alkali or alkali-earth metal in the second reactor or by heating the second reactor to temperature from 600°C to boiling point of the chloride salt of alkali or alkali-earth metal using a vacuum lower than 100 mcm in order to remove the alkali or alkali-earth metal salt.EFFECT : obtained elementary silicon has purity which is sufficient for producing silicon photoelectric generating devices and other semiconductor devices.13 cl