OXIDE SINTERED COMPACT AND SPUTTERING TARGET

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Provided is an oxide sintered compact that has both high conductivity and relative density and is ideal for the forming of an oxide semiconductor film for a display device. The oxide sintered compact of the present invention is obtained by mixing and sintering, each in powder form, zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group comprising Al, Hf, Ta, Ti, Nb, Mg, Ga and rare earth elements, wherein, when the oxide sintered compact is subjected to X-ray diffraction, a Zn2SnO4 compound is detected but spinel compounds in the form of a ZnMxOy phase or an MxO­y phase (where x and y are arbitrary integers) are not detected.