SEMICONDUCTOR ON INSULATOR SUBSTRATE AND DEVICE FORMED THEREFROM

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A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an effective lattice constant that enables growth of semiconductor material having a diamond lattice directly on the dielectric. Examples of the rare earth scandate dielectric include gadolinium scandate (GdScO3), dysprosium scandate (DyScO3), and alloys of gadolinium and dysprosium scandate (Gd1-xDyxScO3).