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PURPOSE : The manufacturing method of a microcrystal semiconductor film and the manufacturing method of a semiconductor device are provided to enhance crystalline and to improve deposition rate of the microcrystal semiconductor film by adding rare gas to source gas of the microcrystal semiconductor film.
CONSTITUTION : An oxidation insulating layer(55) is formed on a substrate. A first microcrystal semiconductor film(57) is formed on the oxidation insulating layer. A second microcrystal semiconductor film(59) is formed on the first microcrystal semiconductor film. The size of a mixed phase particle of a second microcrystal semiconductor film is determined by the interval of a mixed phase particle(57a) of the first microcrystal semiconductor film. A third microcrystal semiconductor film is formed on the second microcrystal semiconductor film.
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