SPUTTERING TARGET OF Al-BASE ALLOY

文件类型：PDF文档
文件大小：539K
PROBLEM TO BE SOLVED : To provide a technology which can suppress the occurrence of splash even though a film is formed at high speed, when having used a sputtering target of an Al-base alloy. SOLUTION : When crystal orientations of , , , and in a normal line direction with respect to each face to be sputtered of a surface layer part, 1/4×t part and 1/2×t part of the sputtering target of the Ni-rare earth element-Al-base alloy have been observed, the sputtering target satisfies the following conditions (1) and (2) : (1) when R is defined as the total area rate of ±15°, ±15° and ±15°, R is 0.35 or more but 0.8 or less, and (2) Ra, Rb and Rc are in the range of ±20% of an R average value [Rave=(Ra+Rb+Rc)/3]. COPYRIGHT : (C)2011, JPO&INPIT