A method of manufacturing a GaN based compound semiconductor crystal

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PROBLEM TO BE SOLVED : To provide a technology for a method of producing a GaN-based compound semiconductor crystal using a rare earth group 13 (3B) perovskite as a substrate, which comprises improving the quality of a GaN thin film formed between the substrate and the GaN-based compound semiconductor crystal and by which the crystal quality of the GaN-based compound semiconductor crystal can be improved. SOLUTION : In a method for growing the GaN-based compound semiconductor crystal on the surface (1 main surface) of the substrate of the rare earth group 13 (3B) perovskite crystal containing one or more rare earth elements, a high quality GaN single crystal thin film having a uniform thickness is formed on the substrate of the rare earth group 13 (3B) perovskite crystal mentioned above by allowing Ga atom to adsorb on the substrate of the rare earth group 13 (3B) perovskite crystal so as to form several atomic layers and nitriding the adsorbed Ga atom, and then, the GaN-based compound semiconductor crystal is grown on the high quality GaN single crystal thin film mentioned above.