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A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least part of the elementary body therebetween. The elementary body is made of a semiconductor ceramic expressed by a formula : {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 (wherein M represents at least one of Ba and Ca, A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies 0
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