METHOD OF MANUFACTURING ELECTRONIC DEVICE MATERIAL

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PROBLEM TO BE SOLVED : To provide a method of plasma processing an insulating film having excellent electrical characteristics. SOLUTION : The plasma processing method includes processes of : carrying a substrate with the insulating film formed thereon into a vacuum vessel; and improving the insulating film by plasma generated by supplying a treating gas fed into the vacuum vessel with a high frequency power having a frequency more than 300 MHz and less than 2, 500 MHz. A mixed gas including a rare gas and oxygen or the mixed gas including the rare gas and nitrogen is used as a processing gas. The plasma is generated using a flow rate of an oxygen gas in 1 to 1, 000 sccm and a flow rate of the rare gas in 200 to 3, 000 sccm in the case of the mixed gas in which the treatment gas contains the rare gas and oxygen. The plasma is generated using a flow rate of a nitrogen gas in 10 to 500 sccm and a flow rate of the rare gas in 200 to 3, 000 sccm in the case of a gas in which the processing gas contains the rare gas and nitrogen. COPYRIGHT : (C)2010, JPO&INPIT