EPITAXIAL FILM, PIEZOELECTRIC ELEMENT, FERROELECTRIC ELEMENT, MANUFACTURING METHODS OF THE SAME,

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There are disclosed an epitaxial film, comprising : heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula : [in-line-formulae]yA(1−y)B  (1), [/in-line-formulae] in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula : [in-line-formulae]xA2O3−(1−x)BO2  (2), [/in-line-formulae] in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.