DOPED DIELECTRIC LAYERS AND METHOD FOR FORMATION THEREOF

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A doped dielectric layer and a method for forming the doped dielectric layer are provided. The doped dielectric layer comprises (a) a silicon dioxide or silicon oxynitride layer (b) doped with from about 0.01 to about 20 atomic percent of one or more rare-earth elements, the one or more rare-earth element being distributed throughout the dielectric layer. Semiconductor structures comprising the above dielectric layer are also provided.