FILM FORMING METHOD OF SEMICONDUCTOR DEVICE WHICH USES NEUTRAL PARTICLE

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PROBLEM TO BE SOLVED : To provide a semiconductor device film forming method using neutral particles, which can suppress gas dissociation due to high-energy electrons or UV light and can form an excellent film having a planned molecular structure. SOLUTION : The method includes steps of exciting a rare gas to generate plasma, imparting an electric field to the charged particles in the plasma to impart a predetermined energy, and neutralizing the charged particles to generate a neutral particle beam NB, irradiating the material gas with the neutral particle beam NB having a controlled energy, dissociating the predetermined molecules to dissociate, and forming a film 30 on a substrate 14. COPYRIGHT : (C)2010, JPO&INPIT