SEMICONDUCTOR MANUFACTURING COMPONENT AND METHOD OF MANUFACTURING THE SAME

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PROBLEM TO BE SOLVED : To provide a semiconductor manufacturing component capable of keeping the performance and the reliability of a semiconductor high and a method of manufacturing the same. SOLUTION : The semiconductor manufacturing component is formed by removing a grain boundary layer on the surface layer of a base body 1 comprising a silicon nitride crystalline particle 3 and the grain boundary layer and composed of silicon nitride sintered compact having ≥98% relative density, providing a porous layer 5 formed by joining the silicon nitride crystalline particles 3 three dimensionally and providing a dense high purity silicon nitride layer 6 substantially comprising the silicon nitride on the surface of the porous layer 5. Even in transportation of the silicon wafer placed on the dense high purity silicon nitride layer 6, the silicon wafer does not come into contact with, for example, an element of a rare earth element or aluminum element or the like constituting the conventional grain boundary layer to prevent the contamination of the silicon wafer and the performance or the reliability of the semiconductor is not prevented from the deterioration. COPYRIGHT : (C)2010, JPO&INPIT