METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

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An electrode formed on a part of a surface of a semiconductor substrate and front ends of a forest of conductive nanotubes on a surface of a substrate for growth are exposed to a rare gas plasma. The front ends of the conductive nanotubes exposed to the rare gas plasma are brought into contact with the electrode, so that the conductive nanotubes are fixed to the electrode. The substrate for growth is removed from the semiconductor substrate together with the conductive nanotubes which are not in contact with the electrode, while leaving the conductive nanotubes fixed to the electrode on the semiconductor substrate side.