The aluminum nitride substrate and thin film substrate using the same

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PROBLEM TO BE SOLVED : To solve a problem that though a Ti/Pt/Au or Ti/Pd/Au thin film is formed on an aluminium nitride surface for a microwave integrated circuit or a VLD submount, if adhesion of the thin film is bad, peeling at the time of wire bonding, or blister in the film at the time of using for a long time or using under a high temperature, may occur. SOLUTION : The aluminium nitride substrate is a substrate of a sintered compact of aluminium nitride containing a rare earth-aluminium oxide, and its surface is mirror finished to ≤0.2 μm in arithmetic mean roughness Ra, and performed with an etching treatment, and the ratio M1/M2 is ≤0.95, and M1≤7%, wherein M1 is an occupying area ratio of the rare earth-aluminium oxide in a unit area of the surface of the substrate, and M2 is an occupying area ratio of the rare earth-aluminium oxide to the unit area of the center of the substrate. COPYRIGHT : (C)2003, JPO