SILICON NITRIDE SINTERED COMPACT, CERAMIC SUBSTRATE FOR HEAT DISSIPATION AND INSULATION, CIRCUIT B

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PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact which has high sinterability, high compactness and high thermal conductivity without adjusting the firing environment, and a ceramic substrate for heat dissipation and insulation, a ceramic circuit board for heat dissipation and insulation and a module for heat dissipation and insulation which are obtained using the silicon nitride sintered compact and have high heat dissipation properties. SOLUTION : The silicon nitride sintered compact contains Si3N4 at 85-90 mol%, a light rare-earth element at 1-5 mol% in terms of an oxide, a heavy rare-earth element and/or Y at 1-5 mol% in terms of an oxide and Sr at 3-13 mol% in terms of an oxide, provided that its peak intensity ratio S1/S2 is <0.1 when the peak intensity of silicon at a frequency of 521±2 cm-1 in Raman spectroscopic analysis is defined as S1 and the peak intensity of silicon nitride near a frequency of 206±2 cm-1 is defined as S2. The ceramic substrate for heat dissipation and insulation, the ceramic circuit board for heat dissipation and insulation and the module for heat dissipation and insulation using the silicon nitride sintered compact are also provided. COPYRIGHT : (C)2008, JPO&INPIT