INSULATION FILM MANUFACTURING METHOD, REACTION DEVICE, POWER GENERATION DEVICE AND ELECTRONIC APPA

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PURPOSE : A method for fabricating an insulation layer is provided to avoid generation of a crack or peeling of an insulation layer that can easily occur when a metal substrate is twisted under high-temperature surroundings, by decreasing the difference of thermal expansion coefficients between the metal substrate and the insulation layer. CONSTITUTION : An R layer composed of at least one of rare-earth elements of Sc, Y, La, Gd, Dy, Ho, Er, Tm and Lu is formed in a portion of the surface of a metal substrate to isolate. The R layer is hydrogenated in an inert gas atmosphere to form an RH2 layer. The RH2 layer is oxidized to be an R2O3 layer by an oxidation process. The oxidation process can be performed in a vacuum atmosphere in which the metal substrate is not oxidized. © KIPO 2008