METHOD FOR FORMING FILM THROUGH SPUTTERING

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PROBLEM TO BE SOLVED : To highly precisely control the thickness of a film by stabilizing a sputtering rate for a long period of time in the lifetime of a target. SOLUTION : This film-forming method comprises the steps of : arranging a gas-supplying system 3 for introducing two gases selected from rare gases as a sputtering gas into a vacuum chamber 1, respectively; increasing a flow rate of a gas having a higher sputtering rate and decreasing a flow rate of a gas having a lower sputtering rate as a film-forming period of time elapsed, by using first and second mass flow controllers 4a and 4b; and offsetting the change of the sputtering rate due to the erosion of the target 5 with a change of a flow ratio of the gases. Then, the method stabilizes the sputtering rate from an early stage of the target life up to the end of the target life. COPYRIGHT : (C)2008, JPO&INPIT