ELECTROLUMINESCENT ELEMENT HAVING OXIDE DOPED WITH TERBIUM AND RICH IN SILICON, AND MANUFACTURING M

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PROBLEM TO BE SOLVED : To manufacture an electroluminescent element for radiating light having a specific wavelength. SOLUTION : In the manufacturing method of the electroluminescent element, a produced substrate is doped with rare earth elements as a luminous layer, a silicon-rich layer is vapor-deposited on a gate oxide layer, damages generated in a layer doped with the rare earth elements and rich in silicon is restored by annealing and oxidizing a structure, and the electroluminescent element is built in a CMOS IC. The electroluminescent element manufactured by the method has the substrate, a layer doped with rare earth elements and rich in silicon formed on a gate oxide layer for radiating light at a prescribed wavelength, an upper end electrode formed on a layer doped with the rare earth elements and rich in silicon, and a combined CMOS IC structure manufactured there. COPYRIGHT : (C)2008, JPO&INPIT