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Provided is a method for correcting defects of a photomask. The method is provided with an observing step wherein the defect of a part to be corrected is observed and defect information for correction is obtained, and a defect correcting step wherein a focused ion beam is applied to the part to be corrected and the defect is corrected. The focused ion beam is composed of rare gas ions and generated by an ion beam irradiation system having a gas field ion source.