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Disclosed is a method for recovering a rare metal such as gallium or indium from a group III-V compound semiconductor or the like for recycling. Specifically disclosed is a method for recovering at least one metal selected from the group consisting of gallium, indium and aluminum from a group III-V compound semiconductor or a material for such a semiconductor containing at least one element selected from the group consisting of arsenic, antimony and selenium. This method is characterized by comprising a step wherein an adsorbent containing a rare earth metal compound is used and arsenic, antimony and selenium are selectively adsorbed on the adsorbent.