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Lanthanide doped TiOx dielectric films by plasma oxidation

2025-06-18 10:134910下载
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A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by evaporation of Ti, a lanthanide, and oxidation of the evaporated Ti/lanthanide film using an oxygen plasma.


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