YTTRIUM OXIDE-CONTAINING MATERIAL, COMPONENT OF SEMICONDUCTOR MANUFACTURING EQUIPMENT, AMD METHOD

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An yttrium oxide-containing material is provided to have excellent mechanical characteristics and to improve yield, handability, and reliability when applied to a member for a semiconductor manufacturing apparatus. An yttrium oxide-containing material(1) contains at least silicon, carbon, and fluorine. The yttrium oxide-containing material has a crystalline phase comprising yttrium oxide and silicon carbide(2). The yttrium oxide-containing material has a three-point bending strength of 250 MPa or greater. A method for preparing the yttrium oxide-containing material includes a step of firing the yttrium oxide and a mixture powder of the silicon carbide and rare earth metal fluoride at a firing temperature of 1300-1850 °C. Further, a diameter of particles of the silicon carbide is 10 mum.