文件类型:PDF文档
文件大小:47K
PROBLEM TO BE SOLVED : To provide a method for production of a rare earth vanadate single crystal which has no crystal defect, has high quality, is large-sized platy and is suitable for use in a semiconductor laser-excited solid-state laser.
SOLUTION : The platy rare earth vanadate single crystal has the shoulder parts 6 in which a crystal width is gradually widened, and is produced by using a seed crystal 4 of orientation [110] and growing the crystal toward the orientation [110] by an edge-defined film-fed crystal growth (EFG) method.
COPYRIGHT : (C)2008, JPO&INPIT