SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC CONTAINING MIXED RARE EARTH ELEMENTS

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A semiconductor device (90, 91), such as a transistor or capacitor, is provided. The device (90, 91) includes a substrate (25, 92), a gate dielectric (96) over the substrate (25, 92), and a conductive gate electrode film (98) over the gate dielectric (96). The gate dielectric (96) includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements.