NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

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PURPOSE : A nonvolatile semiconductor memory device and its manufacturing method are provided to enhance cell operation characteristics and to prevent the degradation of an inter-electrode dielectric of a memory cell without the decrease of an effective capacitance. CONSTITUTION : A nonvolatile semiconductor memory device includes memory cells. Each memory cell includes a semiconductor region of a first conductive type, source and drain regions(17) of a second conductive type, a channel region between the source and the drain regions, an isolation region(7) in the semiconductor region, a tunneling insulating layer on the channel region, a floating gate electrode on the tunneling insulating layer, a metal silicide film on the floating gate electrode, an inter-electrode dielectric, and a control gate electrode. The floating gate electrode is made of a conductive material containing Si. The inter-electrode dielectric(12) is formed on the metal silicide film. The inter-electrode dielectric is made of one selected from a group consisting of a rare oxide, rare nitride or rare oxynitride. The control gate electrode is formed on the inter-electrode dielectric. © KIPO 2007