PLASMA ETCHING DEVICE, PLASMA ETCHING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To provide a plasma etching device capable of etching a rare earth element oxide formed on a silicon board at a high selection ratio, and a manufacturing method for a semiconductor in which a rare earth element oxide film is formed on a silicon board. SOLUTION : The plasma etching device 1 is provided with a supply means 21 which supplies boron, fluorine, carbon, and silicon to an atmosphere inside a vacuum chamber 2. The supply means 21 holds a solid supply material 52 containing the boron, fluorine, carbon, and silicon. When a lanthanum oxide film formed on a silicon board is subjected to plasma etching by the plasma etching device 1, an etching rate of the lanthanum oxide film can be made higher than that of the silicon board to offer a high selection rate. This allows easy manufacturing of a CMOS having a lanthanum oxide film with a high dielectric constant as a gate insulating film. COPYRIGHT : (C)2007, JPO&INPIT