STORAGE ELEMENT, MANUFACTURING METHOD THEREOF AND STORAGE DEVICE

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PROBLEM TO BE SOLVED : To provide a storage element capable of suppressing variations in the characteristics, such as threshold voltages in recording, reading and writing of information, and having appropriate characteristics. SOLUTION : The storage element 10 is configured, such that a storage layer 5 is sandwiched between a first electrode 1 and a second electrode 4, the storage layer 5 comprises an oxide layer 2 and an ionized layer 3 containing Cu which are laminated, the oxide layer 2 consists of a rare earth element oxide, and the ionized layer 3 contains one or more kinds of elements selected from among S, Se and Te. COPYRIGHT : (C)2007, JPO&INPIT