Manufacturing method of a thin film transistor array panel for a liquid crystal display

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Directly connected to the drain electrode including gate electrode and a gate pad, a gate wiring, a gate insulating film thereon, form contact layer-shaped semiconductor layer. Resistance contact layer on the insulating film chromium, titanium or molybdenum layer magnetic film including one of top film made including a data line and the source electrode, drain electrode and a data pad patterns of a TFT are formed by including.. Drain electrode is formed on the same, and second thin. to form contact holes that expose the. On a saw-tooth of the transparent conductive such as IZO to the pixel electrode, pattern is exposed to form a. Wherein, zigzag pattern of gate line and the data line is preferably used as the film aluminum alloy, addition component Ti, Ta, Zr and cubic such as transition metal or rare earth metal such as Y and Nd include one or more of its content to 10at % to 1at %, more preferably to 1at % 6at % on for reducing contact resistance IZO film simplifies the comprises.