SOI WAFER AND MANUFACTURING METHOD THEREFOR

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PROBLEM TO BE SOLVED : To provide a manufacturing method for an SOI wafer being capable of forming an SOI layer on a thermal conductive substrate having a thermal conductivity larger than silicon without generating a thermal strain, a peeling, a cracking or the like and having the high film-thickness uniformity of the SOI layer. SOLUTION : In the manufacturing method for the SOI wafer, the SOI layer is formed on the thermal conductive substrate by joining a single-crystal silicon wafer and the thermal conductive substrate, and thinning the single-crystal silicon wafer. In the manufacturing method, at least one of hydrogen ions or rare-gas ions is implanted from the surface of the single-crystal silicon wafer and an ion implanting layer is formed in the wafer, and the ion-implanting surface of the single-crystal silicon wafer and/or the surface of the thermal conductive substrate is treated by a plasma and/or ozone. In the manufacturing method, the ion-implanting surface of the single-crystal silicon wafer and the surface of the thermal conductive substrate are stuck fast and joined at a room temperature while using the treated surface as a joint surface, and an impact is applied to the ion implanting layer. Resultantly, the single-crystal silicon wafer is peeled mechanically, and the SOI layer is formed on the thermal conductive substrate. COPYRIGHT : (C)2006, JPO&NCIPI