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PROBLEM TO BE SOLVED : To provide a storage element arranged to read/write information easily and stably, and to be fabricated easily by a relatively simple fabrication process. SOLUTION : In the storage element 10, a memory layer 4 and an ion source layer 3 are sandwiched between a first electrode 2 and a second electrode 6 wherein the ion source layer 3 contains an element selected from Cu, Ag and Zn, an element selected from Te, S and Se, and boron (or rare earth element and silicon). COPYRIGHT : (C)2006, JPO&NCIPI