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PROBLEM TO BE SOLVED : To provide a semiconductor light emitting device in which the same semiconductor layer has two functions of current constriction and luminescence by a simple method, enabling the emission of light of an arbitrary color with strong intensity, especially incandescent light, and its manufacturing method.
SOLUTION : A rare earth dope layer 18 as a semiconductor layer is formed at the upper side of a light emitting layer 15, a rare earth element is added at least to a portion of it, and by forming the rare earth dope layer 18 with an adjacent contact layer, the rare earth dope layer 18 is excited by light emission from the light emitting layer 15 to generate fluorescence, and can be used as a current constriction layer. Thus, one and the same semiconductor layer combines two functions of current constriction and light emission by a simple method, thus providing a semiconductor light emission device enabling the emission of strong-intensity light with an arbitrary color, especially white light, and its manufacturing method.
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