FABRICATING METHOD OF FERROELECTRIC CAPACITOR IN SEMICONDUCTOR DEVICE

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Manufacturing method relates to in particular the present invention refers to a ferroelectric layer and an upper layer, a quantity of a surface of metal storage electrode nucleation site artificially after formation of the form, so by depositing ferroelectric random oriented perovskite nuclear preferentially grown the supporting layer is formed on electrical ferroelectric is invention. The present invention refers to for the same, in manufacturing method of ferroelectric capacitor, on a semiconductor substrate random oriented metal for forming the lower electrode and, random oriented perovskite nuclear to produce an electronic on the surface of said metal storage electrode, ion rare metal or conductive metal surface of said metal storage electrode the bombing a nucleation site and form, said nucleation sites with metal storage electrode and forming a ferroelectric on, said top electrode is formed on an upper ferroelectric includes to 6 : 4..