METHOD FOR FORMING METAL CONTACT IN THE SEMICONDUCTOR DEVICE

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The present invention refers to metal layer active region of the semiconductor substrate for forming a contact metal of the method as a, said a semiconductor active region material layer and laminating a metal film on the substrate and, with a layer of metallic material on said and, the formation of a polysilicon layer, said polysilicon layer and-cobalt material layer and a nitration material layer, said diffusion cobalt and of forming a barrier layer, with the substrate through the said semiconductor substrate and said layer thicknesses and cobalt with a layer of metallic material includes a silicide layer motor is over the reference current value, semiconductor substrate silicon-lean or a spike prevent the semiconductor substrate into a metal layer or a can be, it is achieved to prevent the protrusion, in addition, metal material layer, W, Mo, V, Ta including a refractory metal, or Eu, Gd, Dy, Er with a metal selected from among rare earth metal including a is removed by reacting the sacrificial element, semiconductor substrate and even if layer titanium dioxide layer with a layer of metallic material, metal material layer silicide step silicon dioxide films at film since diffuse into the insulating films with a layer of metallic material is elemental silicon, dioxide layer contact and semiconductor substrate and reducing a contact resistance can be.