SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

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PROBLEM TO BE SOLVED : To provide an inexpensive semiconductor light emitting device manufactured by a simple manufacturing process. SOLUTION : The semiconductor light emitting device 10 comprises an n-type semiconductor 12, an active layer 13, and a p-type semiconductor 14 while the active layer 13 is constituted so as to be pinched between the n-type semiconductor 12 and the p-type semiconductor 14. Emission center ion 18 and a quantum dot 19 are contained in the active layer 13 and when a voltage is impressed on the semiconductor light emitting device 10 through ohmic electrodes (11, 15), energy is moved to the emission center ion 18 by FRET to excite the emission center ion 18. Thereafter, the energy level of the emission center ion 18 is changed to an emission level and, further, is changed to a normal energy level. In this case, the emission center ion 18 emits light of a predetermined visible wavelength. The emission center ion 18 is selected from rare earth metallic ion, transition metallic ion or the like so as to emit the light of such a visible wavelength.