COMPOSITION FOR THIN FILM CAPACITIVE DEVICE, INSULATING FILM WITH HIGH DIELECTRIC CONSTANT, THIN F

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A composition for thin film capacitive device comprising a bismuth layered compound whose c-axis is oriented substantially perpendicularly to a basal plane, wherein the bismuth layered compound is represented by the composition formula : (Bi2O2)2+(Am-1BmO3m+1)2- or Bi2Am-1BmO3m+3 in which the character m is an odd number, and wherein at least part of the Bi and/or A of the bismuth layered compound is substituted with a rare earth element, the number of moles of rare earth element used in the substitution relative to the total molar quantity (m+1) of Bi and A being >1.0 but ≤2.8.