Method for growing single crystal of rare earth silicate

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PROBLEM TO BE SOLVED : To stably obtain a single crystal free from voids and having satisfactory performance as a scintillator by specifying the concn. of Al as an impurity in a stock melt contg. oxide of a rare earth element and silicon oxide. SOLUTION : Characteristics of a grown single crystal are affected by a specified impurity element in stock. In the case of growth of a gadolinium silicate single crystal, gadolinium oxide having a low concn. of Al as an impurity is used as stock. By this low concn. of Al, the occurrence of voids in the resultant crystal is prevented and characteristics as a scintillator can be improved. Since the crystal is free from voids, fluorescence generated in the crystal by irradiation efficiently reaches a photomultiplier brought into contact with one face of the crystal and the fluorescence output and energy resolving power of the photomultiplier are enhanced. As a result, characteristics of the crystal as a scintillator are improved. When stock having <=0.4ppm concn. of Al as an impurity is used, oxide of a rare earth element having <=0.4ppm concn. of Al is preferably used.