MAGNETIC SWITCHING DEVICE AND MEMORY USING THE SAME

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A magnetic switching device of the present invention includes : at least one transition member; at least one electrode; and at least one free magnetic member. The transition member contains a perovskite compound that contains at least a rare earth element and an alkaline-earth metal, the electrode and the free magnetic member are arranged in parallel and in a noncontact manner on the transition member, at least one of the free magnetic members is coupled magnetically with the transition member, and the transition member undergoes at least ferromagnetism-antiferromagnetism transition by injecting or inducing electrons or holes, whereby a magnetization direction of at least one of the free magnetic members changes. This configuration is applicable to a magnetic memory that records/reads out magnetization information of the free magnetic layer and various magnetic devices that utilize a resistance change of the magnetoresistive effect portion.