SILICON OXYNITRIDE PASSIVATED RARE EARTH ACTIVATED THIOALUMINATE PHOSPHORS FOR ELECTROLUMINESCENT DI

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A novel structure is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a silicon oxynitride layer provided directly adjacent the top and/or bottom of the phosphor thin film layer, wherein said silicon oxynitride layer comprises a composition of Si3NxOyHz where 2 <= x <= 4, 0 < y <= 2 and 0 <= z <= 1. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films. © KIPO & WIPO 2007