Cr-N base distortion and strain sensor resistance film and manufacturing method thereof

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PROBLEM TO BE SOLVED : To obtain a highly stable high-sensitivity thin film for strain sensor by reducing the absolute value of the resistance-temperature coefficient of a Cr thin film, while maintaining the gage factor of the Cr thin film as much as possible. SOLUTION : This resistance film is set to be composed of a thin film, a having a composition expressed by a general formula Cr100-x-y Nx My , where M represents one or two or more kinds of elements selected form among Ti, V, Nb, Ta, Ni, Zr, Hf, Si, Ge, C, O, P, Se, Te, Zn, Cu, Bi, Fe, Mo, W, As, Sn, Sb, Pb, B, Ga, In, Tl, Ru, Rh, Re, Os, Ir, Pt, Pd, Ag, Au, Co, Be, Mg, Ca, Sr, Ba, Mn, Al, and rare-earth elements and x and y are atomic percentages specified satisfying relations of 0.0001=2, and temperature coefficient of an electric-resistance -4×10 to 4×10 / deg.C.