GARNET SINGLE CRYSTAL, ITS GROWING METHOD, AND GARNET SUBSTRATE FOR LIQUID-PHASE EPITAXIAL GROWTH

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PROBLEM TO BE SOLVED : To provide a growing method whereby the occurrence of cracks at the shoulder part of a garnet single crystal, especially a large-sized single crystal, is suppressed and the propagation of cracks from the shoulder part to the body is prevented when the shoulder part is cut off from the body; a garnet single crystal yielded thereby and with little strain; and a non-magnetic garnet substrate using the single crystal and used for a liquid-phase epitaxial growth method. SOLUTION : In the growing method, a garnet single crystal represented by the composition formula : A3B5O12 (wherein A is at least one kind of element selected from among rare earth elements and Ca; and B is at least one of Mg and Zr) is grown from a seed crystal by a pulling method while a pulled crystal is being rotated. In growing the shoulder part of the single crystal, the shape of the shoulder part is controlled so that a curve expressing the crystal diameter of the shoulder part as a function of growth distance has at least two inflection points; and the number of revolutions of the crystal is increased after the inflection points.