CHEMICAL-MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR BY USING

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The present invention relates to a chemical mechanical polishing (CMP) slurry composition comprising cerium oxide particles and a solvent. The cerium oxide particles are doped or coated with a rare earth metal and have a cubic shape with one or more vertexes at which three {100} planes cross at right angles and an aspect ratio of primary particles of 2.0 or less. Accordingly, a slurry can be provided, in which a particle size is dense, a shape is uniform, and a polishing rate of the film to be polished is enhanced.COPYRIGHT KIPO 2018