RARE-EARTH DOPED SEMICONDUCTOR INFRARED RADIATION THICK-FILM ELECTRONIC PASTE AND PREPARATION METHOD

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A rare-earth doped semiconductor infrared radiation thick-film electronic paste and a preparation method therefor. The electronic paste comprises, in parts by weight, 10%-90% of organic vehicle and 10%-90% of functional phase. The organic vehicle comprises, in parts by weight, 50%-95% of organic solvent, 1%-40% of thickener, and 0%-5% of organic aid. The functional phase comprises, in parts by weight, 40%-95% of rare-earth doped infrared radiation semiconductor material, 5%-60% of conductor material, and 0%-20% of functional additive. The electronic paste features a wide range of selectable base materials, a wide heating temperature range, high heating efficiency, and a heating body of low temperature, and can implement bidirectional conversion of heat to electricity and electricity to heat. The preparation method comprises : a. mixing a thickener, an organic aid, and an organic solvent to prepare an organic vehicle; b. mixing the organic vehicle and a functional phase, and grinding the mixture to prepare an electronic paste; and c. printing the electronic paste onto a substrate by means of screen printing, and curing or sintering same to form a film.