Plasma device for assembly and manufacturing method thereof

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The present invention is : a plasma device part having an yttrium oxide film containing microparticles formed by impact sintering with a particle diameter of not more than 1 µm, the plasma device part being characterized in that the yttrium oxide film has a film containing 1-8 mass% of an oxide of a lanthanoid element selected from La, Ce, Sm, Dy, Gd, Er, and Yb, the thickness of the film is at least 10 µm, the film density is at least 90%, and the area ratio of the particles, present in a 20 µm × 20 µm unit area of the film, for which the grain boundaries are visible is 0-80% while the area ratio of particles for which the grain boundaries are fused is 20-100%; and a manufacturing method therefor. Said configuration provides : a plasma device part with which it is possible to stably and effectively limit the occurrence of particles during the plasma process, limit reduction of productivity and increased etching and film formation cost, and prevent contamination of product by impurities by limiting the occurrence of microparticles; and a manufacturing method therefor.