Rare earth precursors, their production methods, and methods for forming thin films using them

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The present invention relates to a compound capable of thin film deposition through vapor deposition and, specifically, to a rare earth compound, which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor comprising same, a manufacturing method therefor, and a method for forming a thin film by using same.