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To provide a method for manufacturing a bismuth substitution rare earth iron garnet single crystal film, capable of preventing a fracture, etc., from occurring.SOLUTION : A bismuth substitution rare earth iron garnet single crystal film is represented by the composition formula (Ln3-aBia)(Fe5-bAb)O12. A method for manufacturing the bismuth substitution rare earth iron garnet single crystal film comprises steps of : forming a buffer layer having an average lattice constant Lb (where, Lb>Ls) on the surface of a paramagnetic garnet substrate having a lattice constant Ls at a thickness of 5-30 μm; and growing the bismuth substitution rare earth iron garnet crystal film of 100 μm or more superimposed on the buffer layer and having an average lattice constant Lf (where, Lf>Lb) set as a target. The rate of change of lattice constant in the buffer layer is steeper as compared with that in the bismuth substitution rare earth iron garnet crystal film.SELECTED DRAWING : Figure 1